Invention Grant
- Patent Title: Sputter target based on titanium dioxide
- Patent Title (中): 基于二氧化钛的溅射靶
-
Application No.: US10223531Application Date: 2002-08-19
-
Publication No.: US07431808B2Publication Date: 2008-10-07
- Inventor: Markus Schultheis , Christoph Simons , Martin Weigert
- Applicant: Markus Schultheis , Christoph Simons , Martin Weigert
- Applicant Address: DE Hanau
- Assignee: W.C. Heraeus GmbH & Co., KG
- Current Assignee: W.C. Heraeus GmbH & Co., KG
- Current Assignee Address: DE Hanau
- Agency: Wolff & Samson PC
- Agent Klaus P. Stoffel
- Priority: DE10140514 20010817
- Main IPC: C23C14/35
- IPC: C23C14/35 ; B28B1/00 ; B22F1/00 ; C04B35/00

Abstract:
An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 Ω-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.
Public/Granted literature
- US20030038028A1 Sputter target based on titanium dioxide Public/Granted day:2003-02-27
Information query
IPC分类: