发明授权
- 专利标题： Flash memory device and related erase operation
- 专利标题（中）： 闪存设备和相关擦除操作
-
申请号： US11501070申请日： 2006-08-09
-
公开(公告)号： US07433244B2公开(公告)日： 2008-10-07
- 发明人: Chi-Weon Yoon , Heung-Soo Lim
- 申请人： Chi-Weon Yoon , Heung-Soo Lim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2005-0131876 20051228
- 主分类号： G11C16/00
- IPC分类号： G11C16/00
摘要：
An erase operation for a flash memory device includes identifying a sector group including a plurality of sectors based on an address, simultaneously pre-programming the sectors in the sector group, simultaneously erasing the sectors the sector group, and simultaneously post-programming the sectors in the sector group.
公开/授权文献
- US20070147136A1 Flash memory device and related erase operation 公开/授权日：2007-06-28
信息查询
