发明授权
US07434198B2 Method and computer program product for detecting potential failures in an integrated circuit design after optical proximity correction
失效
用于在光学邻近校正之后检测集成电路设计中的潜在故障的方法和计算机程序产品
- 专利标题： Method and computer program product for detecting potential failures in an integrated circuit design after optical proximity correction
- 专利标题（中）： 用于在光学邻近校正之后检测集成电路设计中的潜在故障的方法和计算机程序产品
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申请号： US11323401申请日： 2005-12-29
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公开(公告)号： US07434198B2公开(公告)日： 2008-10-07
- 发明人: Nadya Strelkova , Santosh Menon
- 申请人： Nadya Strelkova , Santosh Menon
- 申请人地址： US CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： US CA Milpitas
- 代理商 Eric James Whitesell
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method of detecting potential failures from a corrected mask design for an integrated circuit includes steps of receiving as input a corrected mask design for an integrated circuit, searching the corrected mask design to find a critical edge of a polygon that is closer than a selected minimum distance from a polygon edge opposite the critical edge, constructing a critical region bounded by the critical edge and the polygon edge opposite the critical edge, comparing the critical region to a potential defect criterion, and generating as output a location of the critical region when the critical region satisfies the potential defect criterion.
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