发明授权
US07435668B2 Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions
失效
掺杂杂质的方法，以及使用含有杂质离子的溶液制造半导体器件和应用电子设备的方法
- 专利标题： Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions
- 专利标题（中）： 掺杂杂质的方法，以及使用含有杂质离子的溶液制造半导体器件和应用电子设备的方法
-
申请号： US11039996申请日： 2005-01-24
-
公开(公告)号： US07435668B2公开(公告)日： 2008-10-14
- 发明人: Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
- 申请人： Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-034608 20040212; JP2004-070493 20040312
- 主分类号： H01L21/225
- IPC分类号： H01L21/225
摘要：
A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.
公开/授权文献
信息查询
IPC分类:
