Invention Grant
- Patent Title: Electron microscope, methods to determine the contact point and the contact of the probe
- Patent Title (中): 电子显微镜,确定探针的接触点和接触的方法
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Application No.: US11459359Application Date: 2006-07-23
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Publication No.: US07435954B2Publication Date: 2008-10-14
- Inventor: Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
- Applicant: Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
- Applicant Address: TW Taoyuan
- Assignee: National Central University
- Current Assignee: National Central University
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW95116721A 20060511
- Main IPC: H01J37/26
- IPC: H01J37/26 ; H01J37/20

Abstract:
An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
Public/Granted literature
- US20070262254A1 ELECTRON MICROSCOPE, METHODS TO DETERMINE THE CONTACT POINT AND THE CONTACT OF THE PROBE Public/Granted day:2007-11-15
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