发明授权
- 专利标题： Solid state imaging apparatus and method for fabricating the same
- 专利标题（中）： 固态成像装置及其制造方法
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申请号： US11335533申请日： 2006-01-20
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公开(公告)号： US07436012B2公开(公告)日： 2008-10-14
- 发明人: Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
- 申请人： Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-019618 20050127
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
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