SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME 有权
    固态成像装置及其制造方法

    公开(公告)号:US20090014759A1

    公开(公告)日:2009-01-15

    申请号:US12233080

    申请日:2008-09-18

    IPC分类号: H01L31/113

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Solid state imaging apparatus and method for fabricating the same
    2.
    发明授权
    Solid state imaging apparatus and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07800144B2

    公开(公告)日:2010-09-21

    申请号:US12233080

    申请日:2008-09-18

    IPC分类号: H01L31/062 H01L31/113

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME
    3.
    发明申请
    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME 有权
    固态成像装置及其制造方法

    公开(公告)号:US20090021626A1

    公开(公告)日:2009-01-22

    申请号:US12233068

    申请日:2008-09-18

    IPC分类号: H04N5/335

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Solid state imaging apparatus and method for fabricating the same
    4.
    发明授权
    Solid state imaging apparatus and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07436012B2

    公开(公告)日:2008-10-14

    申请号:US11335533

    申请日:2006-01-20

    IPC分类号: H01L31/062 H01L31/113

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Solid state imaging apparatus and method for fabricating the same
    5.
    发明申请
    Solid state imaging apparatus and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US20060163628A1

    公开(公告)日:2006-07-27

    申请号:US11335533

    申请日:2006-01-20

    IPC分类号: H01L31/113 H01L21/00

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Solid state imaging apparatus and method for fabricating the same
    6.
    发明授权
    Solid state imaging apparatus and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US08115241B2

    公开(公告)日:2012-02-14

    申请号:US12233068

    申请日:2008-09-18

    IPC分类号: H01L31/062 H01L31/113

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Method for fabricating condenser microphone and condenser microphone
    7.
    发明授权
    Method for fabricating condenser microphone and condenser microphone 有权
    制造电容式麦克风和电容麦克风的方法

    公开(公告)号:US07569906B2

    公开(公告)日:2009-08-04

    申请号:US11702531

    申请日:2007-02-06

    IPC分类号: H01L29/00 H01L29/84

    摘要: A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

    摘要翻译: 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙,除了第一和第二金属间隔物的接合区域之外。

    Solid-state imaging device and camera
    8.
    发明申请

    公开(公告)号:US20070012968A1

    公开(公告)日:2007-01-18

    申请号:US11523578

    申请日:2006-09-20

    IPC分类号: H01L31/113

    摘要: A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

    Solid-state imaging device and camera
    9.
    发明申请
    Solid-state imaging device and camera 有权
    固态成像装置和相机

    公开(公告)号:US20050045925A1

    公开(公告)日:2005-03-03

    申请号:US10930814

    申请日:2004-09-01

    摘要: The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.

    摘要翻译: 本发明是形成在硅基板1上的固态成像装置,用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 该固态成像装置包括针对每个像素的成像区域,该成像区域包括具有第一导电类型的电荷累积区域的光电二极管,晶体管和器件隔离区域,其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。

    Solid state imaging apparatus, method for driving the same and camera using the same
    10.
    发明授权
    Solid state imaging apparatus, method for driving the same and camera using the same 有权
    固体摄像装置及其驱动方法及使用其的相机

    公开(公告)号:US08378401B2

    公开(公告)日:2013-02-19

    申请号:US13335537

    申请日:2011-12-22

    IPC分类号: H01L31/062

    摘要: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

    摘要翻译: 固态成像装置包括:多个光电转换单元,每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分,各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个,并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管,每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。