发明授权
US07436698B2 MRAM arrays and methods for writing and reading magnetic memory devices
有权
MRAM阵列和写入和读取磁存储器件的方法
- 专利标题： MRAM arrays and methods for writing and reading magnetic memory devices
- 专利标题（中）： MRAM阵列和写入和读取磁存储器件的方法
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申请号： US11610739申请日： 2006-12-14
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公开(公告)号： US07436698B2公开(公告)日： 2008-10-14
- 发明人: Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Jordan Lai
- 申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Jordan Lai
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Baker & McKenzie LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
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