发明授权
- 专利标题: Phase-change information recording medium, manufacturing method for the same, sputtering target, method for using the phase-change information recording medium and optical recording apparatus
- 专利标题(中): 相变信息记录介质,其制造方法,溅射靶,使用相变信息记录介质的方法和光学记录装置
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申请号: US11244346申请日: 2005-10-04
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公开(公告)号: US07438965B2公开(公告)日: 2008-10-21
- 发明人: Hiroko Ohkura , Kazunori Ito , Hiroshi Deguchi , Masaki Kato , Mikiko Abe , Hiroyoshi Sekiguchi , Makoto Harigaya , Masaru Shinkai
- 申请人: Hiroko Ohkura , Kazunori Ito , Hiroshi Deguchi , Masaki Kato , Mikiko Abe , Hiroyoshi Sekiguchi , Makoto Harigaya , Masaru Shinkai
- 申请人地址: JP Tokyo
- 专利权人: Ricoh Company, Ltd.
- 当前专利权人: Ricoh Company, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Cooper & Dunham LLP
- 优先权: JP2004-029923 20040205
- 主分类号: B32B3/02
- IPC分类号: B32B3/02
摘要:
It is an object of the present invention to provide a phase-change information recording medium, and the like, which is easy to perform initial crystallization, exhibits good recording sensitivity at a linear velocity as high as 10 double speeds or more with as much capacity as DVD-ROM, is capable of overwrite recording and has good storage reliability. For this purpose, the phase-change information recording medium comprises a substrate and at least a first protective layer, a phase-change recording layer, a second protective layer, and a reflective layer disposed on the substrate in one of this sequence and reverse sequence wherein the phase-change recording layer comprises a composition expressed by SnαSbβGaγGeδTeε−Xζ (In this regard, X represents at lease one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ represent composition ratio (atomic percent) of each element and are expressed as 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε≦10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100).
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