发明授权
- 专利标题: Semiconductor fabricating apparatus
- 专利标题(中): 半导体制造装置
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申请号: US11370009申请日: 2006-03-08
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公开(公告)号: US07439115B2公开(公告)日: 2008-10-21
- 发明人: Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
- 申请人: Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
- 申请人地址: JP Kanagawa-Ken
- 专利权人: Semiconductor Eneregy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Eneregy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-Ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2001-358553 20011122
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
公开/授权文献
- US20060155413A1 Semiconductor fabricating apparatus 公开/授权日:2006-07-13
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