发明授权
- 专利标题： Flash memory device having resistivity measurement pattern and method of forming the same
- 专利标题（中）： 具有电阻率测量图案的闪存器件及其形成方法
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申请号： US11164677申请日： 2005-12-01
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公开(公告)号： US07439131B2公开(公告)日： 2008-10-21
- 发明人: Ki Hong Yang , Sang Wook Park
- 申请人： Ki Hong Yang , Sang Wook Park
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR10-2005-0071034 20050803
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is buried to form a resistivity measurement floating gate. This allows the resistivity of the floating gate to be measured even in the SAFG scheme. Contacts for resistivity measurement are directly connected to the resistivity measurement floating gate. Therefore, variation in resistivity measurement values, which is incurred by the parasitic interface, can be reduced.
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