发明授权
- 专利标题: Method for producing tiered gate structure devices
- 专利标题(中): 分层门结构器件的制造方法
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申请号: US11150439申请日: 2005-06-11
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公开(公告)号: US07439166B1公开(公告)日: 2008-10-21
- 发明人: Ivan Milosavljevic , Adele Schmitz , Michael Delaney , Michael Antcliffe
- 申请人: Ivan Milosavljevic , Adele Schmitz , Michael Delaney , Michael Antcliffe
- 申请人地址: US CA Malibu
- 专利权人: HRL Laboratories, LLC
- 当前专利权人: HRL Laboratories, LLC
- 当前专利权人地址: US CA Malibu
- 代理商 Christopher R. Balzan, Esq.
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
In one implementation, a method for fabricating a tiered structure is provided, which includes forming a source and a drain on a substrate with a gate formed therebetween. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped. A gate head mask is formed over the gate foot with the gate head mask exposing a top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.
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