Systems and methods that selectively modify liner induced stress

Invention Grant

US07442597B2 Systems and methods that selectively modify liner induced stress 有权

Title translation: 系统和方法选择性地修改衬垫引起的应力

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Patent Title: Systems and methods that selectively modify liner induced stress
Patent Title (中): 系统和方法选择性地修改衬垫引起的应力
Application No.: US11049275

Application Date: 2005-02-02
Publication No.: US07442597B2

Publication Date: 2008-10-28
Inventor: Ting Y. Tsui , Satyavolu S. Papa Rao , Haowen Bu , Robert Kraft
Applicant: Ting Y. Tsui , Satyavolu S. Papa Rao , Haowen Bu , Robert Kraft
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Frederick J. Telecky, Jr.; Wade J. Brady, III
Main IPC: H01L21/8238
IPC: H01L21/8238

Systems and methods that selectively modify liner induced stress

Abstract:

The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided (102). A strain inducing liner is formed over the semiconductor device (104). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region (106). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region (108).

Abstract(Chinese):

本发明通过提供选择性地将应变应用于半导体器件的多个区域的制造方法来促进半导体制造。提供具有一个或多个区域的半导体器件（102）。应变诱导衬垫形成在半导体器件（104）上。将诸如光致抗蚀剂层或UV反射涂层的选择机构施加到半导体器件以选择区域（106）。选择的区域用改变由选定区域（108）产生的应力的类型和/或大小的应力改变处理来处理。

Public/Granted literature

US20060172481A1 Systems and methods that selectively modify liner induced stress Public/Granted day:2006-08-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS