Invention Grant
US07442646B2 Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
有权
使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成金属配线的方法
- Patent Title: Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
- Patent Title (中): 使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成金属配线的方法
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Application No.: US11077150Application Date: 2005-03-11
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Publication No.: US07442646B2Publication Date: 2008-10-28
- Inventor: Sung-Jun Kim , Jeong-Heon Park , Chang-Ki Hong , Jae-Dong Lee
- Applicant: Sung-Jun Kim , Jeong-Heon Park , Chang-Ki Hong , Jae-Dong Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0061226 20040803
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.
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