发明授权
US07443898B2 Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
用于垂直发射激光的辐射发射半导体体及其制造方法

Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same
摘要:
The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
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