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1.发明授权Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权用于垂直发射激光的辐射发射半导体体及其制造方法公开(公告)号：US07816163B2
公开(公告)日：2010-10-19
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。
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2.发明授权Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权用于垂直发射激光的辐射发射半导体体及其制造方法公开(公告)号：US07443898B2
公开(公告)日：2008-10-28
申请号：US11210263
申请日：2005-08-23
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。
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3.发明申请Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权用于垂直发射激光的辐射发射半导体体及其制造方法公开(公告)号：US20060198413A1
公开(公告)日：2006-09-07
申请号：US11210263
申请日：2005-08-23
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。
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4.发明申请RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权用于垂直发射激光的辐射发射半导体体及其制造方法公开(公告)号：US20090029496A1
公开(公告)日：2009-01-29
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/02
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。
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公开(公告)号：US20060222040A1
公开(公告)日：2006-10-05
申请号：US11291692
申请日：2005-11-30
申请人： Wolfgang Schmid , Ralph Wirth , Klaus Streubel
发明人： Wolfgang Schmid , Ralph Wirth , Klaus Streubel
IPC分类号： H01S3/08
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/405 , H01L33/465 , H01L2924/0002 , H01S5/0217 , H01S5/0425 , H01S5/18308 , H01S5/18375 , H01S5/34326 , H01L2924/00
摘要： A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
摘要翻译： 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。
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公开(公告)号：US07283577B2
公开(公告)日：2007-10-16
申请号：US11291692
申请日：2005-11-30
申请人： Wolfgang Schmid , Ralph Wirth , Klaus Streubel
发明人： Wolfgang Schmid , Ralph Wirth , Klaus Streubel
IPC分类号： H01S3/08
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/405 , H01L33/465 , H01L2924/0002 , H01S5/0217 , H01S5/0425 , H01S5/18308 , H01S5/18375 , H01S5/34326 , H01L2924/00
摘要： A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
摘要翻译： 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。
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公开(公告)号：US07778300B2
公开(公告)日：2010-08-17
申请号：US11579196
申请日：2005-04-11
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译： 一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源， 在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。 泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层 （2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场 垂直发射极层（3）被抑制。
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公开(公告)号：US06973113B2
公开(公告)日：2005-12-06
申请号：US10444800
申请日：2003-05-23
申请人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
发明人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/18388 , H01S5/4056 , H01S2301/166
摘要： An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).
摘要翻译： 一种光泵浦半导体激光装置，其具有具有第一主区域（2）和第二主区域（3）的基板（1），其中至少一个泵浦激光器（11）布置在第一主区域（2）上。 半导体激光器件包括具有谐振器的垂直发射激光器（4），该谐振器具有布置在第一主区域（2）侧面上的第一反射镜（9）和布置在第二主体侧面上的第二反射镜（20） 基板（1）的主区域（3）。
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9.发明授权Semiconductor optical pumping device for radiation emission and the production method thereof 失效用于辐射发射的半导体光泵装置及其制造方法公开(公告)号：US07529284B2
公开(公告)日：2009-05-05
申请号：US10526214
申请日：2003-08-13
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1082 , H01S5/141 , H01S5/18305 , H01S5/4056
摘要： An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).
摘要翻译： 一种具有半导体本体的光学泵浦的辐射发射半导体器件，包括至少一个泵浦辐射源（20）和表面发射量子阱结构（11），泵浦辐射源（20）和量子阱结构（11） ）整体整合。 泵浦辐射源（20）产生用于光学泵浦量子阱结构（11）的泵浦辐射（2），用于将形成在半导体中的量子阱结构（9）中的泵浦辐射（2）引入的凹部（10） 泵浦辐射源（20）和量子阱结构（11）之间的主体。
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10.发明申请Semiconductor optical pumping device for radiation emission and the production method thereof 失效用于辐射发射的半导体光泵装置及其制造方法公开(公告)号：US20060104327A1
公开(公告)日：2006-05-18
申请号：US10526214
申请日：2003-08-13
IPC分类号： H01S5/00
CPC分类号： H01S5/18316 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1082 , H01S5/141 , H01S5/18305 , H01S5/4056
摘要： An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).
摘要翻译： 一种具有半导体本体的光学泵浦的辐射发射半导体器件，包括至少一个泵浦辐射源（20）和表面发射量子阱结构（11），泵浦辐射源（20）和量子阱结构（11） ）整体整合。 泵浦辐射源（20）产生用于光学泵浦量子阱结构（11）的泵浦辐射（2），用于将形成在半导体中的量子阱结构（9）中的泵浦辐射（2）引入的凹部（10） 泵浦辐射源（20）和量子阱结构（11）之间的主体。
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