Invention Grant
US07446027B2 Method for forming gate structure with local pulled-back conductive layer and its use
有权
用局部拉回导电层形成栅极结构的方法及其应用
- Patent Title: Method for forming gate structure with local pulled-back conductive layer and its use
- Patent Title (中): 用局部拉回导电层形成栅极结构的方法及其应用
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Application No.: US11763753Application Date: 2007-06-15
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Publication No.: US07446027B2Publication Date: 2008-11-04
- Inventor: Chiang Yuh Ren
- Applicant: Chiang Yuh Ren
- Applicant Address: TW
- Assignee: Promos Technologies Inc.
- Current Assignee: Promos Technologies Inc.
- Current Assignee Address: TW
- Agency: Holland & Knight LLP
- Agent Brian J Colandreo, Esq.
- Priority: TW96100946A 20070110
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
A method for forming a gate structure with a pulled-back conductive layer and the use of the method are provided. The method conducts a local, not global, pull-back process on the conductive layer of the gate structure at the position intended for contact window formation, wherein the pull-back process is conducted after rapid thermal oxidation to prevent CBCB short, CB open and/or CBGC short.
Public/Granted literature
- US20080166866A1 METHOD FOR FORMING GATE STRUCTURE WITH LOCAL PULLED-BACK CONDUCTIVE LAYER AND ITS USE Public/Granted day:2008-07-10
Information query
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