公开(公告)号：US07446027B2

公开(公告)日：2008-11-04

申请号：US11763753

申请日：2007-06-15

Applicant: Chiang Yuh Ren

Inventor： Chiang Yuh Ren

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/28247 ,  H01L21/28061 ,  H01L21/28114 ,  H01L21/76897

Abstract: A method for forming a gate structure with a pulled-back conductive layer and the use of the method are provided. The method conducts a local, not global, pull-back process on the conductive layer of the gate structure at the position intended for contact window formation, wherein the pull-back process is conducted after rapid thermal oxidation to prevent CBCB short, CB open and/or CBGC short.

Abstract translation: 提供一种用于形成具有拉回导电层的栅极结构的方法和该方法的使用。 该方法在用于接触窗口形成的位置处在栅极结构的导电层上进行局部的，而不是全局的拉回过程，其中拉伸过程在快速热氧化之后进行以防止CBCB短，CB开放和 /或CBGC短。