Invention Grant
- Patent Title: Method of ion implanting for tri-gate devices
- Patent Title (中): 三栅极器件离子注入方法
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Application No.: US11394614Application Date: 2006-03-31
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Publication No.: US07449373B2Publication Date: 2008-11-11
- Inventor: Brian S. Doyle , Suman Datta , Jack T. Kavalieros , Amlan Majumdar
- Applicant: Brian S. Doyle , Suman Datta , Jack T. Kavalieros , Amlan Majumdar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for ion implanting a tip source and drain region and halo region for a tri-gate field-effect transistor is described. A silicon body is implanted, in one embodiment, from six different angles to obtain ideal regions.
Public/Granted literature
- US20070238273A1 Method of ion implanting for tri-gate devices Public/Granted day:2007-10-11
Information query
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