发明授权
US07452713B2 Process for manufacturing a microfluidic device with buried channels
有权
用于制造具有埋入通道的微流体装置的方法
- 专利标题： Process for manufacturing a microfluidic device with buried channels
- 专利标题（中）： 用于制造具有埋入通道的微流体装置的方法
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申请号： US11191325申请日： 2005-07-28
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公开(公告)号： US07452713B2公开(公告)日： 2008-11-18
- 发明人: Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
- 申请人： Gabriele Barlocchi , Pietro Corona , Ubaldo Mastromatteo , Flavio Villa
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Baker & McKenzie LLP
- 优先权： EP00830148 20000229
- 主分类号： C12M1/34
- IPC分类号： C12M1/34 ; C12M3/00
摘要：
A process for manufacturing a microfluidic device, including the steps of: forming at least one channel in a semiconductor material body; forming a dielectric diaphragm above the channel, for closing the channel; and forming heating elements for providing thermal energy inside the channel. The heating elements are formed directly on said dielectric diaphragm.
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