发明授权
- 专利标题： CMP method providing reduced thickness variations
- 专利标题（中）： CMP方法提供减小的厚度变化
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申请号： US11543200申请日： 2006-10-05
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公开(公告)号： US07452817B2公开(公告)日： 2008-11-18
- 发明人: Ilyoung Yoon , Jae Ouk Choo , JaEung Koo
- 申请人： Ilyoung Yoon , Jae Ouk Choo , JaEung Koo
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2006-0004876 20060117
- 主分类号： H01L21/032
- IPC分类号： H01L21/032 ; H01L21/461
摘要：
A chemical mechanical polishing (CMP) method is disclosed for use in the fabrication of a semiconductor device having dense and sparse regions. The method uses an abrasive stop layer formed on the dense and sparse regions to control polishing of a material layer formed on the abrasive stop layer by a rigid, fixed abrasive polishing pad.
公开/授权文献
- US20070167014A1 CMP method providing reduced thickness variations 公开/授权日：2007-07-19
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