发明授权
- 专利标题： Via plug formation in dual damascene process
- 专利标题（中）： 通过双镶嵌工艺中的塞子形成
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申请号： US11352815申请日： 2006-02-13
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公开(公告)号： US07452822B2公开(公告)日： 2008-11-18
- 发明人: Jen-Chieh Shih , Bang-Ching Ho , Jian-Hong Chen
- 申请人： Jen-Chieh Shih , Bang-Ching Ho , Jian-Hong Chen
- 申请人地址： TW Hsin Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.
公开/授权文献
- US20070190778A1 Via plug formation in dual damascene process 公开/授权日：2007-08-16
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