发明授权
- 专利标题： Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material
- 专利标题（中）： 具有导电磁性材料的自旋阀磁阻器件在磁性材料的介电层或半导体层中交替地桥接
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申请号： US10492493申请日： 2002-10-10
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公开(公告)号： US07453672B2公开(公告)日： 2008-11-18
- 发明人: Bernard Dieny , Bernard Rodmacq , Franck Ernult
- 申请人： Bernard Dieny , Bernard Rodmacq , Franck Ernult
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique
- 当前专利权人： Commissariat a l'Energie Atomique
- 当前专利权人地址： FR Paris
- 代理机构： Thelen LLP
- 优先权： FR0113174 20011012
- 国际申请： PCT/FR02/03448 WO 20021010
- 国际公布： WO03/032338 WO 20030417
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under the influence of a magnetic field, and comprising means of circulating a current in the spin valve transverse to the plane of the layers. The spin valve comprises at least one discontinuous dielectric or semiconducting layer in the stack, with electrically conducting bridges passing through the thickness of the dielectric or semiconducting layer, these bridges being designed to locally concentrate the current that passes transversely through the stack. Application particularly suitable for magnetic read heads, and random access memories.
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