发明授权
US07455795B2 Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
失效
电荷转移络合物包括电子给体和电子受体，作为电阻记忆体的基础
- 专利标题： Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
- 专利标题（中）： 电荷转移络合物包括电子给体和电子受体，作为电阻记忆体的基础
-
申请号： US11023368申请日： 2004-12-29
-
公开(公告)号： US07455795B2公开(公告)日： 2008-11-25
- 发明人: Guenter Schmid , Peter Baeuerle , Elena Mean-Osteritz , Marcus Halik , Hagen Klauk
- 申请人： Guenter Schmid , Peter Baeuerle , Elena Mean-Osteritz , Marcus Halik , Hagen Klauk
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Edell, Shapiro & Finnan, LLC
- 优先权： DE10361713 20031230
- 主分类号： H01L35/24
- IPC分类号： H01L35/24 ; H01B1/12 ; G11C11/00 ; G06F12/08
摘要：
Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.