发明授权
US07455795B2 Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
失效
电荷转移络合物包括电子给体和电子受体,作为电阻记忆体的基础
- 专利标题: Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
- 专利标题(中): 电荷转移络合物包括电子给体和电子受体,作为电阻记忆体的基础
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申请号: US11023368申请日: 2004-12-29
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公开(公告)号: US07455795B2公开(公告)日: 2008-11-25
- 发明人: Guenter Schmid , Peter Baeuerle , Elena Mean-Osteritz , Marcus Halik , Hagen Klauk
- 申请人: Guenter Schmid , Peter Baeuerle , Elena Mean-Osteritz , Marcus Halik , Hagen Klauk
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Edell, Shapiro & Finnan, LLC
- 优先权: DE10361713 20031230
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01B1/12 ; G11C11/00 ; G06F12/08
![Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories](/abs-image/US/2008/11/25/US07455795B2/abs.jpg.150x150.jpg)
摘要:
Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.