发明授权
- 专利标题： Porogen material
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申请号： US10301109申请日： 2002-11-21
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公开(公告)号： US07456488B2公开(公告)日： 2008-11-25
- 发明人: Chongying Xu , Alexander S. Borovik , Thomas H. Baum
- 申请人： Chongying Xu , Alexander S. Borovik , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Intellectual Property/Technology Law
- 代理商 Steven J. Hultquist; Maggie Chappuis
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L31/0256
摘要：
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
公开/授权文献
- US20040102006A1 Porogen material 公开/授权日：2004-05-27
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