公开(公告)号：US08802882B2

公开(公告)日：2014-08-12

申请号：US12862739

申请日：2010-08-24

Applicant: Ziyun Wang ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Tianniu Chen ,  Thomas H. Baum

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US08541318B2

公开(公告)日：2013-09-24

申请号：US13369810

申请日：2012-02-09

Applicant: Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

Inventor： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C07F7/10

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,

公开(公告)号：US20130122722A1

公开(公告)日：2013-05-16

申请号：US13808165

申请日：2011-06-23

Applicant: Julie Cissell ,  Chongying Xu ,  Thomas M. Cameron ,  William Hunks ,  David W. Peters

Inventor： Julie Cissell ,  Chongying Xu ,  Thomas M. Cameron ,  William Hunks ,  David W. Peters

IPC: H01L49/02

CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN═Nb(NEt2)3; tBuN═Nb(NMe2)3; t-BuN═Nb(NEtMe)3; t-AmN═Nb(NEt2)3; t-AmN═Nb(NEtMe)3; t-AmN═Nb(NMe2)3; t-AmN═Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCU; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4.x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

公开(公告)号：US08168811B2

公开(公告)日：2012-05-01

申请号：US12507048

申请日：2009-07-21

Applicant: Thomas M. Cameron ,  Chongying Xu ,  Tianniu Chen

Inventor： Thomas M. Cameron ,  Chongying Xu ,  Tianniu Chen

IPC: C07F9/00 ,  C07F15/00 ,  C07F5/06

CPC classification number: C07C225/14 ,  C07F7/003

Abstract: Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.

Abstract translation: 用于气相沉积工艺（例如CVD / ALD）以在基底上形成含金属膜的前体。 前体在一类中包括配位至少一种式（I）配位体的中心金属原子M：其中：R 1，R 2和R 3各自独立地为H或无规部分; 并且G1是增加配体与中心金属原子M的配位的电子给体臂取代基; 其中当G1是氨基烷基时，氨基氮上的取代基不是烷基，氟烷基，脂环族或芳基，并且不连接形成含有碳，氧或氮原子的环结构。 还公开了适用于在诸如半导体器件和平板显示器的微电子器件产品的制造中用于在基底上形成含金属膜的酮酯，丙二酸酯和其它前体。

公开(公告)号：US20120064719A1

公开(公告)日：2012-03-15

申请号：US13256832

申请日：2010-03-17

Applicant: Jorge A. Lubguban, JR. ,  Thomas M. Cameron ,  Chongying Xu ,  Weimin Li

Inventor： Jorge A. Lubguban, JR. ,  Thomas M. Cameron ,  Chongying Xu ,  Weimin Li

IPC: H01L21/28 ,  B05D5/12 ,  H01B1/00

CPC classification number: C23C16/0272 ,  C23C16/18 ,  C23C16/45534 ,  H01L28/65

Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

Abstract translation: 一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。 用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌 和锶共沉积。 该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

公开(公告)号：US07887883B2

公开(公告)日：2011-02-15

申请号：US12777519

申请日：2010-05-11

Applicant: Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

Inventor： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

IPC: C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C07F7/02

CPC classification number: H01L21/0217 ,  C07F7/025 ,  C07F7/10 ,  C07F7/12 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,

Abstract translation: 本发明涉及通过用于制造ULSI器件和器件结构的低温（例如，<300℃）的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。

公开(公告)号：US07858816B2

公开(公告)日：2010-12-28

申请号：US12790835

申请日：2010-05-30

Applicant: Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

Inventor： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C07F9/00

CPC classification number: C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

公开(公告)号：US20100255198A1

公开(公告)日：2010-10-07

申请号：US12438502

申请日：2007-08-31

Applicant: John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

IPC: C23C16/44 ,  C23C16/00

CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract translation: 挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

公开(公告)号：US20100240918A1

公开(公告)日：2010-09-23

申请号：US12790835

申请日：2010-05-30

Applicant: Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

Inventor： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C07F9/00

CPC classification number: C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

Abstract translation: 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。

公开(公告)号：US07786320B2

公开(公告)日：2010-08-31

申请号：US12464726

申请日：2009-05-12

Applicant: Ziyun Wang ,  Chongying Xu ,  Ravi K. Laxman ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

Inventor： Ziyun Wang ,  Chongying Xu ,  Ravi K. Laxman ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

IPC: C07F7/02

CPC classification number: H01L21/0217 ,  C07F7/025 ,  C07F7/10 ,  C07F7/12 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,

Abstract translation: 半导体器件如低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜和含有氮化硅（Si 3 N 4），硅氧氮化物（SiO x N y）的膜的制造中的含硅膜的硅前体， 和/或二氧化硅（SiO 2）。 本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。