发明授权
- 专利标题: Ion implant beam angle integrity monitoring and adjusting
- 专利标题(中): 离子注入束角完整性监测和调整
-
申请号: US11217700申请日: 2005-08-31
-
公开(公告)号: US07459703B2公开(公告)日: 2008-12-02
- 发明人: Steven Walther , Ukyo Jeong , Sandeep Mehta
- 申请人: Steven Walther , Ukyo Jeong , Sandeep Mehta
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: G21K5/10
- IPC分类号: G21K5/10
摘要:
A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
公开/授权文献
信息查询