Invention Grant
- Patent Title: Ion implant beam angle integrity monitoring and adjusting
- Patent Title (中): 离子注入束角完整性监测和调整
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Application No.: US11217700Application Date: 2005-08-31
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Publication No.: US07459703B2Publication Date: 2008-12-02
- Inventor: Steven Walther , Ukyo Jeong , Sandeep Mehta
- Applicant: Steven Walther , Ukyo Jeong , Sandeep Mehta
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.
Public/Granted literature
- US20070045569A1 Ion implant beam angle integrity monitoring and adjusting Public/Granted day:2007-03-01
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