A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed to connect the word lines to the read/write circuit, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.