发明授权
- 专利标题： Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
- 专利标题（中）： 包括氮化镓基化合物的结晶氮化镓基化合物和半导体器件的生长过程
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申请号： US11063479申请日： 2005-02-23
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公开(公告)号： US07462505B2公开(公告)日： 2008-12-09
- 发明人: Chia Ming Lee , Tsung Liang Cheng , I Ling Chen , Yu Chuan Liu , Jen Inn Chyi
- 申请人： Chia Ming Lee , Tsung Liang Cheng , I Ling Chen , Yu Chuan Liu , Jen Inn Chyi
- 申请人地址： TW Nantou
- 专利权人： Tekcore Co., Ltd.
- 当前专利权人： Tekcore Co., Ltd.
- 当前专利权人地址： TW Nantou
- 代理机构： Baker & McKenzie LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
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