发明授权
- 专利标题： Electro-optical device and semiconductor circuit
- 专利标题（中）： 电光器件和半导体电路
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申请号： US11339671申请日： 2006-01-26
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公开(公告)号： US07462517B2公开(公告)日： 2008-12-09
- 发明人: Hisashi Ohtani , Jun Koyama , Shunpei Yamazaki
- 申请人： Hisashi Ohtani , Jun Koyama , Shunpei Yamazaki
- 申请人地址： JP Kanagawa-Ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-Ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP10-344230 19981203
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/20 ; H01L21/36
摘要：
A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing to the air. After the semiconductor film is crystallized by using a catalytic element, the catalytic element is removed. In the TFT formed in such a process, fluctuation in electrical characteristics such as a threshold voltage and a subthreshold coefficient is extremely small. Thus, it is possible to form a circuit, such as a differential amplifier circuit, which is apt to receive an influence of characteristic fluctuation of a TFT.
公开/授权文献
- US20060134840A1 Electro-optical device and semiconductor circuit 公开/授权日：2006-06-22
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