发明授权
- 专利标题： Method for fabricating a circuit component
- 专利标题（中）： 电路元件制造方法
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申请号： US12025002申请日： 2008-02-02
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公开(公告)号： US07462558B2公开(公告)日： 2008-12-09
- 发明人: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou , Hsin-Jung Lo
- 申请人： Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou , Hsin-Jung Lo
- 申请人地址： TW Hsinchu
- 专利权人： Megica Corporation
- 当前专利权人： Megica Corporation
- 当前专利权人地址： TW Hsinchu
- 优先权： TW93124492A 20040812; TW93138329A 20041210
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.
公开/授权文献
- US20080146018A1 CHIP STRUCTURE AND METHOD FOR FABRICATION THE SAME 公开/授权日：2008-06-19
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