Invention Grant
US07463117B2 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR
失效
薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
- Patent Title: Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR
- Patent Title (中): 薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
-
Application No.: US11169645Application Date: 2005-06-30
-
Publication No.: US07463117B2Publication Date: 2008-12-09
- Inventor: Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
- Applicant: Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2004-194380 20040630
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/15 ; H03H9/54
Abstract:
A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
Public/Granted literature
- US20060001508A1 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR Public/Granted day:2006-01-05
Information query
IPC分类:
