发明授权
US07463117B2 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR
失效
薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
- 专利标题： Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR
- 专利标题（中）： 薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
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申请号： US11169645申请日： 2005-06-30
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公开(公告)号： US07463117B2公开(公告)日： 2008-12-09
- 发明人: Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
- 申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-194380 20040630
- 主分类号： H03H9/13
- IPC分类号： H03H9/13 ; H03H9/15 ; H03H9/54
摘要：
A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
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