Invention Grant
- Patent Title: Quantum nano-structure semiconductor laser
- Patent Title (中): 量子纳米结构半导体激光器
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Application No.: US10505770Application Date: 2003-02-24
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Publication No.: US07463661B2Publication Date: 2008-12-09
- Inventor: Mutsuo Ogura
- Applicant: Mutsuo Ogura
- Applicant Address: JP Tokyo JP Kawaguchi-shi
- Assignee: National Institute of Advanced Industrial Science and Technology,Japan Science and Technology Agency
- Current Assignee: National Institute of Advanced Industrial Science and Technology,Japan Science and Technology Agency
- Current Assignee Address: JP Tokyo JP Kawaguchi-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2002-051548 20020227
- International Application: PCT/JP03/01975 WO 20030224
- International Announcement: WO03/073570 WO 20030904
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on the V-grooves by selective growth of a Group III-V compound. The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser. Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.
Public/Granted literature
- US20060056472A1 Quantum nano-composite semiconductor laser and quantum nano-composite array Public/Granted day:2006-03-16
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