公开(公告)号：US20110291158A1

公开(公告)日：2011-12-01

申请号：US13138410

申请日：2010-02-12

Applicant: Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

Inventor： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

IPC: H01L31/0352

CPC classification number: H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

Abstract: The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence band is almost equal to or higher than that of the photo-absorption layer (6) and is a relatively wider gap semiconductor than the photo-absorption layer. The base layer (4) formed on the collector and barrier layer (5), is a relatively narrow gap as compared with the collector and barrier layer (5), wherein the energy level in the conduction band is equal to or higher than that of the collector and barrier layer (5) in the boundary of the collector and barrier layer (5). The emitter layer (3) formed on a base layer (4) is a relatively wide gap as compared with the base layer (4), and the energy level in the valence band is the first conductivity type semiconductor layer lower than that of the base layer (4).

Abstract translation: 本发明提供具有高灵敏度和广泛波长带特性的HPT。 在光吸收层（6）上形成集电极和阻挡层（5），其中导带中的能级高于光吸收层（6）的能级，价带中的能级为 几乎等于或高于光吸收层（6），并且是比光吸收层更宽的间隙半导体。 形成在集电极和阻挡层（5）上的基底层（4）与集电极和阻挡层（5）相比是相对窄的间隙，其中导带中的能级等于或高于 在集电体和阻挡层（5）的边界中的集电极和阻挡层（5）。 形成在基底层（4）上的发射极层（3）与基底层（4）相比是相对较宽的间隙，并且价带中的能级是第一导电类型半导体层低于基底层 层（4）。

公开(公告)号：US6036773A

公开(公告)日：2000-03-14

申请号：US826422

申请日：1997-03-27

Applicant: Xue-Lun Wang ,  Mutsuo Ogura

Inventor： Xue-Lun Wang ,  Mutsuo Ogura

IPC: B82B3/00 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  C30B23/04

CPC classification number: C30B25/02 ,  B82Y10/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S117/913 ,  Y10S977/773 ,  Y10S977/813

Abstract: A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer.A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.

Abstract translation: 生长半导体量子纳米结构所需的III族原子层被适当地限制为单层。 衬底被配置为具有以较高速率进行Ga原子层的生长的快速生长表面部分和Ga原子层的生长以较低速率进行的缓慢生长表面部分。 将Ga原子以不小于生长一层III族原子的量供给到快速生长表面部分。 允许快速生长表面部分上的过量Ga原子通过表面迁移迁移到慢生长表面部分，从而在快速生长表面部分上仅生长一层Ga原子。

公开(公告)号：US08415713B2

公开(公告)日：2013-04-09

申请号：US12735795

申请日：2009-02-17

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: H01L31/101

CPC classification number: H01L31/1123 ,  H01L31/035281 ,  Y02E10/50

Abstract: This invention provides a photo-FET, in which a FET part and photodiode part are stacked, and the FET part and photodiode part are optimized independently in design and operational bias conditions. The semiconductor layer serving as a photo-absorption layer (41) is formed on the cathode semiconductor layer (10) of a photodiode part (50). An electron barrier layer (40) with a wider bandgap semiconductor than a photo-absorption layer (41), which also serves as an anode layer of a photodiode part (50), is formed on a photo-absorption layer (41). The channel layer (15) which constitutes the channel regions of the FET part is formed with a narrower bandgap semiconductor than an electron barrier layer (40) on an electron barrier layer (40). The hole barrier layer (16) with a bandgap wider than the semiconductor which constitutes a channel layer (15) is formed on a channel layer (15). The source electrode (30) and drain electrode (32) which are separated each others, are formed on a hole barrier layer (16). The holes injected into the channel layer (15) by light illumination through the electron barrier layer (40) from the photo-absorption layer (41) are confined with the hole barrier layer (16). And the electrons in a channel layer (15) are confined with the electron barrier layer (40) into the channel layer (15), respectively.

Abstract translation: 本发明提供了一种光电FET，其中堆叠FET部分和光电二极管部分，并且FET部分和光电二极管部分在设计和操作偏置条件下独立优化。 在光电二极管部分（50）的阴极半导体层（10）上形成用作光吸收层（41）的半导体层。 在光吸收层（41）上形成具有比光吸收层（41）更宽的带隙半导体的电子势垒层（40），其也用作光电二极管部分（50）的阳极层。 构成FET部分的沟道区的沟道层（15）形成有比电子势垒层（40）上的电子势垒层（40）窄的带隙半导体。 在沟道层（15）上形成具有宽于构成沟道层（15）的半导体的带隙的空穴阻挡层（16）。 彼此分离的源电极（30）和漏电极（32）形成在空穴阻挡层（16）上。 通过从光吸收层（41）通过电子阻挡层（40）的光照射注入到沟道层（15）中的空穴被限制在空穴阻挡层（16）中。 并且沟道层（15）中的电子分别与电子势垒层（40）一起被限制到沟道层（15）中。

公开(公告)号：US07515622B2

公开(公告)日：2009-04-07

申请号：US11088900

申请日：2005-03-25

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/02284 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2213 ,  H01S5/341 ,  H01S5/34313 ,  H01S5/4031 ,  H01S5/4087

Abstract: A quantum nanostructure semiconductor laser includes a strip-shaped ridge with a plurality of V-grooves formed on a compound semiconductor substrate in the direction of laser beam emission, with the V-grooves arrayed in parallel and with each V-groove extending orthogonally to the direction of laser beam emission. On the ridge, an optical waveguide is provided that includes a lower cladding layer, a plurality of quantum wires, and an upper cladding layer. The quantum wires are formed to a finite length corresponding to the stripe width of the laser beam, and are each located at a position corresponding to a V-groove location. The optical waveguide is trapezoidal in shape. The quantum wires do not project out beyond the width of the ridge, but the ends of the wires are converged and closed off with the upper and lower cladding layers toward higher index crystalline planes.

Abstract translation: 量子纳米结构半导体激光器包括沿激光束发射方向形成在化合物半导体衬底上的多个V形槽的带状脊，其中V形槽平行排列，并且每个V形槽垂直于 激光束发射方向。 在脊上设置有包括下包层，多个量子线和上包层的光波导。 量子线形成为对应于激光束的条宽度的有限长度，并且各自位于对应于V形槽位置的位置。 光波导形状为梯形。 量子线不突出超出脊的宽度，但是线的端部被上下包层朝向较高的指向晶面收敛和闭合。

公开(公告)号：US20080308840A1

公开(公告)日：2008-12-18

申请号：US12191913

申请日：2008-08-14

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: H01L31/112

CPC classification number: H01L31/10 ,  H01L27/14603 ,  H01L27/14643

Abstract: A photo-FET based on a compound semiconductor including a channel layer formed on a substrate constituting a current path between source and drain electrodes, serving as part of a photodiode and a photosensitive region. A back-gate layer that serving as a substrate-side depletion layer formation layer is disposed between the substrate and the channel layer, and applies to the channel layer a back-gate bias by photogenerated carriers upon illumination. A barrier layer is disposed on the front side of the channel layer that causes one of the photogenerated carriers to run through the channel layer and other of the photogenerated carriers to sojourn or be blocked off. A front-side depletion layer formation layer is disposed on the front side of the channel layer brings the front-side depletion layer into contact with the substrate-side depletion layer without illumination to close the current path in the channel layer, bringing the photo-FET to an off-state.

Abstract translation: 一种基于化合物半导体的光电FET，其包括形成在构成源极和漏极之间的电流路径的基板上的沟道层，用作光电二极管的一部分和感光区域。 用作衬底侧耗尽层形成层的背栅层设置在衬底和沟道层之间，并且在照明时通过光生载流子向通道层施加背栅极偏置。 阻挡层设置在通道层的前侧，使得光生载流子之一穿过沟道层和其它光生载流子，以便居住或被阻挡。 在沟道层的前侧设置有正面耗尽层形成层，使得前侧耗尽层与衬底侧耗尽层接触而无需照明，以封闭沟道层中的电流路径， FET截止状态。

公开(公告)号：US4500204A

公开(公告)日：1985-02-19

申请号：US364911

申请日：1982-04-02

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: G01J3/02 ,  G01J3/06 ,  G02B6/04 ,  G02B6/26 ,  G02B21/00 ,  G03F7/20 ,  G01N21/63

CPC classification number: G03F7/7045 ,  B82Y10/00 ,  G01J3/02 ,  G01J3/0218 ,  G02B21/002 ,  G02B26/103 ,  G02B6/262 ,  G03F7/70383 ,  G01J2003/065

Abstract: A scanning-type lithographic and image-pickup device causes the terminal face of either a projecting optical fiber or a picking-up optical fiber to scan a given object in the plane of real image of an objective lens, projects a light through the projecting optical fiber onto the object, and receives the reflected light or a light of photoluminescence through the picking-up optical fiber. When this device is applied to a spectromicroscope, the quantitative surface information can be spectrally measured with high resolution and high reproducibility. When the device is applied to a contracting-projection exposure device or a selective laser annealing device, positional alignment and exposure pattern correction can be easily effected with high accuracy and high productivity. Simultaneous fabrication of a plurality of electronic components can be also obtained by use of this device.

Abstract translation: 扫描型光刻和图像拾取装置使得投影光纤或拾取光纤的终端面扫描物镜的实像平面中的给定对象，通过投影光学器件投射光 并且通过拾取光纤接收反射光或光致发光的光。 当该装置应用于显微镜时，定量表面信息可以以高分辨率和高再现性进行光谱测量。 当将装置应用于收缩投影曝光装置或选择性激光退火装置时，可以容易地以高精度和高生产率实现位置对准和曝光图案校正。 通过使用该装置也可以获得多个电子部件的同时制造。

公开(公告)号：US09076906B2

公开(公告)日：2015-07-07

申请号：US13138410

申请日：2010-02-12

Applicant: Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

Inventor： Mutsuo Ogura ,  SungWoo Choi ,  Nobuyuki Hayama ,  Katsuhiko Nishida

IPC: H01L31/102 ,  H01L31/0304 ,  H01L31/11

CPC classification number: H01L31/03046 ,  H01L31/1105 ,  Y02E10/544

Abstract: A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.

Abstract translation: 异质结双极性光电晶体管包括由第一导电型半导体层形成的光吸收层和作为阻挡层，基极层和发射极层的集电体，其顺序层叠在光吸收层上 。 光吸收层，集电体，基极层和发射极层形成第一台面结构，并且发射极接触层形成第二台面结构。 光吸收层包括具有对应于光电晶体管的感光波长的窄间隙的半导体层。 集电体包括具有比光吸收层的间隙更宽的间隙的半导体层。 基层具有等于或高于集电极能级的能级。 发射极层与基底层相比具有宽的间隙，并且价带中的能级低于基底层的能级。

公开(公告)号：US08610170B2

公开(公告)日：2013-12-17

申请号：US13574487

申请日：2011-01-11

Applicant: Katsuhiko Nishida ,  Mutsuo Ogura

Inventor： Katsuhiko Nishida ,  Mutsuo Ogura

IPC: H01L31/102

CPC classification number: H01L31/1035 ,  H01L27/14649 ,  H01L27/14694

Abstract: An array structure solves issues that exist in conventional compound semiconductor photodiode arrays, such as large cross talk, large surface leaks, large stray capacitance, narrow detection wavelength bands, and bad manufacturing yield, simultaneously. A photodiode array has, laminated upon a semiconductor substrate, a buffer layer (8) with a broad forbidden band width, an I-type (low concentration photosensitive layer (2) with a narrow forbidden band width, and an n-type semiconductor window layer (3) with a broad forbidden band width, wherein photodiode elements are electrically separated from adjacent elements, by doping the periphery of the p-type impurity, and the detection wavelength band is expanded, by making the n-type window layer (3) on the photosensitive layer (2) a thinner layer with crystal growth.

Abstract translation: 阵列结构同时解决了常规化合物半导体光电二极管阵列中存在的问题，如串扰大，表面泄漏大，杂散电容大，检测波长窄，制造成品率差。 光电二极管阵列层压在半导体衬底上，具有宽禁带宽的缓冲层（8），具有窄禁带宽度的I型（低浓度感光层（2））和n型半导体窗 具有宽禁带宽度的层（3），其中通过掺杂p型杂质的周边将光电二极管元件与相邻元件电隔离，并且通过使n型窗口层（3）扩大检测波长带 ）在感光层（2）上具有晶体生长的较薄层。

公开(公告)号：US08530933B2

公开(公告)日：2013-09-10

申请号：US12998343

申请日：2009-10-06

Applicant: Mutsuo Ogura

Inventor： Mutsuo Ogura

IPC: H01L31/072

CPC classification number: H01L31/109 ,  H01L27/1446 ,  H01L31/035281 ,  H01L31/1105 ,  Y02E10/50

Abstract: A highly sensitive and wide spectra-range mesa type photodetector having the impurity diffusion along the mesa-sidewall is provided. A mesa-type hetero-bipolar phototransistor or photodiode having a photo-absorption layer formed by a first semiconductor layer of a first conductivity type, an anode layer (or base layer) formed by a second semiconductor layer of a second conductivity type which has an opposite polarity with the first conductivity type, a wide band gap emitter or window layer formed by the third semiconductor layer on the anode layer, and the wide band gap buffer layer of the first conductivity type which has a relatively wide band gap semiconductor as compared with the second semiconductor layer on the substrate, which also serves as the cathode layer. And the first semiconductor layer, the second semiconductor layer and the wide band gap emitter or window layer is selectively etched to form the mesa structure. The diffusion region shaped like a ring in plan view is also provided from the exposed sidewall of this mesa structure toward the center of the device by a predetermined horizontal width, converted into the second conductivity type, which is the same conductivity type as the second semiconductor layer.

Abstract translation: 提供了具有沿着台面侧壁的杂质扩散的高灵敏度和宽的光谱范围台面型光电检测器。 具有由第一导电类型的第一半导体层形成的光吸收层的台面型异双极光电晶体管或光电二极管，由第二导电类型的第二半导体层形成的阳极层（或基底层） 与第一导电类型相反的极性，由阳极层上的第三半导体层形成的宽带隙发射极或窗口层，以及与第一导电类型相比宽带隙半导体的宽带隙缓冲层与 衬底上的第二半导体层，其也用作阴极层。 并且选择性地蚀刻第一半导体层，第二半导体层和宽带隙发射极或窗口层以形成台面结构。 从该台面结构的暴露的侧壁朝向装置的中心预定水平宽度设置扩散区域，该扩散区域形成为与第二半导体相同的导电类型的第二导电类型 层。

公开(公告)号：US20120286328A1

公开(公告)日：2012-11-15

申请号：US13574487

申请日：2011-01-11

Applicant: Katsuhiko Nishida ,  Mutsuo Ogura

Inventor： Katsuhiko Nishida ,  Mutsuo Ogura

IPC: H01L31/0336

CPC classification number: H01L31/1035 ,  H01L27/14649 ,  H01L27/14694

Abstract: An array structure solves issues that exist in conventional compound semiconductor photodiode arrays, such as large cross talk, large surface leaks, large stray capacitance, narrow detection wavelength bands, and bad manufacturing yield, simultaneously. A photodiode array has, laminated upon a semiconductor substrate, a buffer layer (8) with a broad forbidden band width, an I-type (low concentration photosensitive layer (2) with a narrow forbidden band width, and an n-type semiconductor window layer (3) with a broad forbidden band width, wherein photodiode elements are electrically separated from adjacent elements, by doping the periphery of the p-type impurity, and the detection wavelength band is expanded, by making the n-type window layer (3) on the photosensitive layer (2) a thinner layer with crystal growth.

Abstract translation: 阵列结构同时解决了常规化合物半导体光电二极管阵列中存在的问题，如串扰大，表面泄漏大，杂散电容大，检测波长窄，制造成品率差。 光电二极管阵列层压在半导体衬底上，具有宽禁带宽的缓冲层（8），具有窄禁带宽度的I型（低浓度感光层（2））和n型半导体窗 具有宽禁带宽度的层（3），其中通过掺杂p型杂质的周边将光电二极管元件与相邻元件电隔离，并且通过使n型窗口层（3）扩大检测波长带 ）在感光层（2）上具有晶体生长的较薄层。