发明授权
- 专利标题: Method for inspecting pattern defect and device for realizing the same
- 专利标题(中): 检查图案缺陷的方法及其实现方法
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申请号: US11325550申请日: 2006-01-05
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公开(公告)号: US07465935B2公开(公告)日: 2008-12-16
- 发明人: Yuta Urano , Hiroyuki Nakano , Shunji Maeda , Sachio Uto
- 申请人: Yuta Urano , Hiroyuki Nakano , Shunji Maeda , Sachio Uto
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-013472 20050121
- 主分类号: G01N21/00
- IPC分类号: G01N21/00
摘要:
When using a CCD sensor as a photo-detector in a device for inspecting foreign matters and defects, it has a problem of causing electric noise while converting the signal charge, produced inside by photoelectric conversion, into voltage and reading it. Therefore, the weak detected signal obtained by detecting reflected and scattered light from small foreign matters and defects is buried in the electric noise, which has been an obstacle in detecting small foreign matters and defects. In order to solve the above problem, according to the present invention, an electron multiplying CCD sensor is used as a photo-detector. The electron multiplying CCD sensor is capable of enlarging signals brought about by inputted light relatively to the electric noise by multiplying the electrons produced through photoelectric conversion and reading them. Accordingly, compared to a conventional CCD sensor, it can detect weaker light and, therefore, smaller foreign matters and defects.
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