发明授权
- 专利标题： Bipolar transistor and method for fabricating the same
- 专利标题（中）： 双极晶体管及其制造方法
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申请号： US11450474申请日： 2006-06-12
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公开(公告)号： US07465969B2公开(公告)日： 2008-12-16
- 发明人: Teruhito Ohnishi , Koichiro Yuki , Tsuneichiro Sano , Tohru Saitoh , Ken Idota , Takahiro Kawashima , Shigeki Sawada
- 申请人： Teruhito Ohnishi , Koichiro Yuki , Tsuneichiro Sano , Tohru Saitoh , Ken Idota , Takahiro Kawashima , Shigeki Sawada
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-082421 20030325
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.
公开/授权文献
- US20060226446A1 Bipolar transistor and method for fabricating the same 公开/授权日：2006-10-12
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