发明授权
US07465980B2 Ferroelectric memory, multivalent data recording method and multivalent data reading method
有权
铁电存储器，多值数据记录方法和多值数据读取方法
- 专利标题： Ferroelectric memory, multivalent data recording method and multivalent data reading method
- 专利标题（中）： 铁电存储器，多值数据记录方法和多值数据读取方法
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申请号： US11220902申请日： 2005-09-08
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公开(公告)号： US07465980B2公开(公告)日： 2008-12-16
- 发明人: Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
- 申请人： Yoshihiro Arimoto , Hiroshi Ishihara , Tetsuro Tamura , Hiromasa Hoko , Koji Aizawa , Yoshiaki Tabuchi , Masaomi Yamaguchi , Yasuo Nara , Kazuhiro Takahashi , Satoshi Hasegawa
- 申请人地址： JP Kawasaki JP Tokyo
- 专利权人： Fujitsu Limited,Tokyo Institute of Technology
- 当前专利权人： Fujitsu Limited,Tokyo Institute of Technology
- 当前专利权人地址： JP Kawasaki JP Tokyo
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2004-263639 20040910; JP2005-252504 20050831
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.