发明授权
- 专利标题: Resonator structure and method of producing it
- 专利标题(中): 谐振器结构及其制作方法
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申请号: US10574684申请日: 2004-09-27
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公开(公告)号: US07466213B2公开(公告)日: 2008-12-16
- 发明人: Hans-Peter Löbl , Robert Frederick Milsom , Christof Metzmacher
- 申请人: Hans-Peter Löbl , Robert Frederick Milsom , Christof Metzmacher
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 优先权: EP03103694 20031006
- 国际申请: PCT/IB2004/051867 WO 20040927
- 国际公布: WO2005/034345 WO 20050414
- 主分类号: H03H9/70
- IPC分类号: H03H9/70 ; H03H3/007 ; H03H9/10
摘要:
In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer (30) and the top electrode layer (50). The invention is also concerned with a method of making such resonator structure a its use.
公开/授权文献
- US20080129414A1 Resonator Structure and Method of Producing It 公开/授权日:2008-06-05