发明授权
- 专利标题: Deposition of silicon-containing films from hexachlorodisilane
- 专利标题(中): 从六氯二硅烷中沉积含硅膜
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申请号: US10673375申请日: 2003-09-30
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公开(公告)号: US07468311B2公开(公告)日: 2008-12-23
- 发明人: Anthony Dip , Seungho Oh , Allen John Leith
- 申请人: Anthony Dip , Seungho Oh , Allen John Leith
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.