发明授权
US07468330B2 Imprint process using polyhedral oligomeric silsesquioxane based imprint materials
有权
使用多面体低聚倍半硅氧烷的压印材料的印刷工艺
- 专利标题: Imprint process using polyhedral oligomeric silsesquioxane based imprint materials
- 专利标题(中): 使用多面体低聚倍半硅氧烷的压印材料的印刷工艺
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申请号: US11398135申请日: 2006-04-05
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公开(公告)号: US07468330B2公开(公告)日: 2008-12-23
- 发明人: Robert David Allen , Richard Anthony DiPietro , Geraud Jean-Michel Dubois , Mark Whitney Hart , Robert Dennis Miller , Ratnam Sooriyakumaran
- 申请人: Robert David Allen , Richard Anthony DiPietro , Geraud Jean-Michel Dubois , Mark Whitney Hart , Robert Dennis Miller , Ratnam Sooriyakumaran
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A method of forming a structure. The method including: forming a layer of a polymerizable composition including one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, one or more polymerizable diluents, one or more photoacid generators and/or one or more photoinitiators; pressing a surface of a template having a relief pattern into the layer, the template, the layer filling voids in the relief pattern; polymerizing the layer to have thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the dielectric layer; and either curing the layer to create a porous dielectric layer followed by filling spaces between the thick regions of the porous dielectric layer with an electrically conductive material or filling spaces between the thick regions of the dielectric layer with an electrically conductive material followed by curing the dielectric layer to create a porous dielectric layer.
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