摘要:
A photoacid generating polymer (PAG polymer) comprises i) a first repeat unit of capable of reacting with a photogenerated acid to form a carboxylic acid containing repeat unit, ii) a second repeat unit of capable of forming the photogenerated acid, and iii) a third repeat unit comprising a norbornyl ester, wherein a norbornyl ring of the norbornyl ester comprises a monovalent substituent having the formula *-L′-C(CF3)2(OH). L′ is a divalent linking group comprising at least one carbon and the starred bond of L′ is linked to the norbornyl ring. The first repeat unit, second repeat unit, and the third repeat unit are covalently bound repeat units of the PAG polymer.
摘要:
A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; andone or more polymerizable diluents, the diluents constituting at least 50% by weight of the composition.
摘要:
A composite membrane includes a filtration membrane with a surface; and a layer on the surface of the filtration membrane. The layer includes a polymer including a poly(ethylene glycol) moiety cross-linked with an ammonium salt or a precursor of an ammonium salt
摘要:
A polymeric membrane includes an active layer on a support. The active layer includes a polymer with a backbone, and the backbone has attached thereto at least one fluoroalcohol moiety.
摘要:
The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要:
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
摘要:
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
摘要翻译:一种组合物,其包含式T m 3的功能化多面体低聚倍半硅氧烷衍生物,其中m等于8,10或12和Q n M R1,R2,R3其中n等于8,10或12。 官能团包括碱水溶性部分。 官能化多面体低聚倍半硅氧烷衍生物的混合物非常适合用作光刻和浸没光刻应用中的光致抗蚀剂的顶涂层。
摘要:
A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
摘要:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要:
Polymers comprising polycyclic repeating units containing pendant anhydride moieties are disclosed. The polymer can be polymerized from polycycloolefins containing pendant anhydride moieties in the presence of a nickel containing single component catalyst. In optional embodiments the polycycloolefin monomer containing the pendant anhydride functionality can be copolymerized with other polycycloolefin monomers that contain pendant functional groups to yield random copolymer products.