发明授权
US07468525B2 Test structures for development of metal-insulator-metal (MIM) devices
有权
金属 - 绝缘体 - 金属(MIM)器件的开发测试结构
- 专利标题: Test structures for development of metal-insulator-metal (MIM) devices
- 专利标题(中): 金属 - 绝缘体 - 金属(MIM)器件的开发测试结构
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申请号: US11633930申请日: 2006-12-05
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公开(公告)号: US07468525B2公开(公告)日: 2008-12-23
- 发明人: Steven Avanzino , Suzette K. Pangrle , Manuj Rathor , An Chen , Sameer Haddad , Nicholas Tripsas , Matthew Buynoski
- 申请人: Steven Avanzino , Suzette K. Pangrle , Manuj Rathor , An Chen , Sameer Haddad , Nicholas Tripsas , Matthew Buynoski
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H01L29/10
- IPC分类号: H01L29/10
摘要:
In the present electronic test structure comprising, a conductor is provided, overlying a substrate. An electronic device overlies a portion of the conductor and includes a first electrode connected to the conductor, a second electrode, and an insulating layer between the first and second electrodes. A portion of the conductor is exposed for access thereto.