发明授权
- 专利标题： Drain extended PMOS transistors and methods for making the same
- 专利标题（中）： 漏极扩展PMOS晶体管及其制造方法
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申请号： US11012469申请日： 2004-12-15
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公开(公告)号： US07468537B2公开(公告)日： 2008-12-23
- 发明人: Sameer Pendharkar
- 申请人： Sameer Pendharkar
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Semiconductor devices (102) and drain extended PMOS transistors (CT1a) are provided, as well as fabrication methods (202) therefor, in which a p-type separation region (130) is formed between an n-buried layer (108) and the transistor backgate (126) to increase breakdown voltage performance without increasing epitaxial thickness.
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