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发明授权
US07468908B2 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell 有权
适用于将多值存储在单个存储单元中的非易失性半导体存储器件

Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
摘要：
A non-volatile semiconductor memory device includes a non-volatile memory cell and a write circuit that is adapted to write data to the memory cell by supplying a write voltage and a write control voltage to the memory cell to change the write state of the memory cell, changing the supply of the write control voltage to reduce the rate of changing the write state, further changing the supply of the write control voltage to control the reduced rate of changing the write state and terminating the write operation to the memory cell while the rate of changing the write state is reduced.
摘要（中）：

非易失性半导体存储器件包括非易失性存储器单元和写入电路，其适于通过向存储器单元提供写入电压和写入控制电压来将数据写入存储器单元，以改变存储器的写入状态 单元，改变写入控制电压的供应以减小改变写入状态的速率，进一步改变写入控制电压的供应以控制改变写入状态的降低速率并且终止对存储器单元的写入操作，同时 降低写入状态的速率。

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