Invention Grant
- Patent Title: Dual damascene multi-level metallization
- Patent Title (中): 双镶嵌多层金属化
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Application No.: US11619748Application Date: 2007-01-04
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Publication No.: US07470613B2Publication Date: 2008-12-30
- Inventor: Birendra N. Agarwala , Eric M. Coker , Anthony Correale, Jr. , Hazara S. Rathore , Timothy D. Sullivan , Richard A. Wachnik
- Applicant: Birendra N. Agarwala , Eric M. Coker , Anthony Correale, Jr. , Hazara S. Rathore , Timothy D. Sullivan , Richard A. Wachnik
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent William D. Sabo
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.
Public/Granted literature
- US20070111510A1 DUAL DAMASCENE MULTI-LEVEL METALLIZATION Public/Granted day:2007-05-17
Information query
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