发明授权
- 专利标题： Method for manufacturing a semiconductor device, method for manufacturing magnetic memory, and the magnetic memory thereof
- 专利标题（中）： 半导体装置的制造方法，磁性存储器的制造方法及其磁性存储器
-
申请号： US11489630申请日： 2006-07-20
-
公开(公告)号： US07473641B2公开(公告)日： 2009-01-06
- 发明人: Ching-Yuan Ho , Yung-Hsiang Chen
- 申请人： Ching-Yuan Ho , Yung-Hsiang Chen
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 代理机构： Rabin & Berdo, P.C.
- 优先权： TW95100379A 20060104
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763
摘要：
A method for manufacturing a semiconductor device is provided. First, a first metal conductive line is formed, and then a semiconductor device is formed on the first metal conductive line. A dielectric layer is formed on the semiconductor device. A contact window is formed at a position in the dielectric layer corresponding to the first metal conductive line. Then, a metal plug is formed in the contact window. The metal plug is used as a mask for etching the semiconductor device, such that the etched semiconductor device takes the form of a shape corresponding to the metal plug. Through the manufacturing method, the semiconductor device is formed according to the shape of the metal plug and is completely aligned with the metal plug.
公开/授权文献
信息查询
IPC分类:
