发明授权
- 专利标题: Method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
- 专利标题(中): 将包含硅,碳和氟的层沉积到半导体衬底上的方法
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申请号: US11601362申请日: 2006-11-16
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公开(公告)号: US07473645B2公开(公告)日: 2009-01-06
- 发明人: Mirzafer Abatchev , Krupakar M. Subramanian
- 申请人: Mirzafer Abatchev , Krupakar M. Subramanian
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/331
- IPC分类号: H01L21/331
摘要:
The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a masking feature projecting from a substrate. The feature has a top, opposing sidewalls, and a base. A layer comprising SixCyFz is deposited over the feature, where “x” is from 0 to 0.2, “y” is from 0.3 to 0.9, and “z” is from 0.1 to 0.6. The SixCyFz—comprising layer and upper portions of the feature opposing sidewalls are etched effective to laterally recess such upper portions proximate the feature top relative to lower portions of the feature opposing sidewalls proximate the feature base. After such etching of the SixCyFz—comprising layer and such etching of upper portions of the feature sidewalls, the substrate is etched using the masking feature as a mask.